制造商 | 部件名 | 数据表 | 功能描述 |
QT Optoelectronics |
H24B1
|
68Kb / 1P |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR
|
Everlight Electronics C... |
ITR8105
|
175Kb / 8P |
Gallium Arsenide Infrared Emitting Diode
|
ITR8010
|
253Kb / 8P |
GALLIUM ARSENIDE INFRARED EMITTING DIODE
|
ITR8117
|
241Kb / 8P |
Gallium arsenide infrared emitting diode
|
List of Unclassifed Man... |
ITR8102
|
206Kb / 8P |
gallium arsenide infrared emitting diode
|
CLED155
|
54Kb / 2P |
Gallium Aluminum Arsenide Infrared Emitting Diode
|
NTE Electronics |
NTE3028
|
19Kb / 2P |
Infrared Emitting Diode PN Gallium Arsenide
|
List of Unclassifed Man... |
CLI800W
|
77Kb / 2P |
This optical switch couples a gallium arsenide infrared emitting diode
|
Toshiba Semiconductor |
TLP4592G
|
217Kb / 6P |
The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
|
TLP595G
|
318Kb / 8P |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|