数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

MRFG35002N6T1 数据表 (PDF) - Freescale Semiconductor, Inc

MRFG35002N6T1 Datasheet PDF - Freescale Semiconductor, Inc
部件名 MRFG35002N6T1
下载  MRFG35002N6T1 下载

文件大小   212.89 Kbytes
  12 Pages
制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc
功能描述 Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35002N6T1 Datasheet (PDF)

Go To PDF Page 下载 数据表
MRFG35002N6T1 Datasheet PDF - Freescale Semiconductor, Inc

部件名 MRFG35002N6T1
下载  MRFG35002N6T1 Click to download

文件大小   212.89 Kbytes
  12 Pages
制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc
功能描述 Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35002N6T1 数据表 (HTML) - Freescale Semiconductor, Inc

Back Button MRFG35002N6T1 Datasheet HTML 1Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 2Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 3Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 4Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 5Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 6Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 7Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 8Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 9Page - Freescale Semiconductor, Inc MRFG35002N6T1 Datasheet HTML 10Page - Freescale Semiconductor, Inc Next Button 

MRFG35002N6T1 产品详情

3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.

• Typical Single-Carrier W-CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
   Power Gain — 10 dB
   Drain Efficiency — 27%
   ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth
• 1.5 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.




类似零件编号 - MRFG35002N6T1

制造商部件名数据表功能描述
logo
Freescale Semiconductor...
MRFG35002N6T1 FREESCALE-MRFG35002N6T1 Datasheet
193Kb / 12P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6T1 FREESCALE-MRFG35002N6T1_08 Datasheet
193Kb / 12P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
More results


类似说明 - MRFG35002N6T1

制造商部件名数据表功能描述
logo
Freescale Semiconductor...
MRFG35010MT1 FREESCALE-MRFG35010MT1 Datasheet
516Kb / 12P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
logo
NXP Semiconductors
MRFG35010A NXP-MRFG35010A Datasheet
490Kb / 18P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
Rev. 2, 12/2008
logo
Freescale Semiconductor...
MRFG35005ANT1 FREESCALE-MRFG35005ANT1 Datasheet
452Kb / 13P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35003N6AT1 FREESCALE-MRFG35003N6AT1 Datasheet
221Kb / 11P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
logo
NXP Semiconductors
MRFG35010AN NXP-MRFG35010AN Datasheet
1Mb / 25P
   Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013
logo
Freescale Semiconductor...
MRFG35003M6T1 FREESCALE-MRFG35003M6T1_06 Datasheet
132Kb / 12P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35003ANT1 FREESCALE-MRFG35003ANT1 Datasheet
473Kb / 18P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005MT1 FREESCALE-MRFG35005MT1_06 Datasheet
132Kb / 12P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6AT1 FREESCALE-MRFG35002N6AT1 Datasheet
187Kb / 11P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010NT1 FREESCALE-MRFG35010NT1 Datasheet
173Kb / 10P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010R1 FREESCALE-MRFG35010R1 Datasheet
373Kb / 11P
   Gallium Arsenide PHEMT RF Power Field Effect Transistor
More results




关于 Freescale Semiconductor, Inc


Freescale Semiconductor是一家美国半导体公司,成立于1948年。
该公司是微控制器,传感器和其他半导体产品的领先提供商,用于汽车,工业和消费市场中的各种应用。
Freescale的产品以其高性能,低功耗和较小的外形而闻名。
该公司是NXP半导体在2015年收购的,其产品和技术继续以NXP品牌开发和出售。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




链接网址



隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com