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STP12NB30 数据表 (PDF) - STMicroelectronics

STP12NB30 Datasheet PDF - STMicroelectronics
部件名 STP12NB30
下载  STP12NB30 下载

文件大小   56.51 Kbytes
  6 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP12NB30 Datasheet (PDF)

Go To PDF Page 下载 数据表
STP12NB30 Datasheet PDF - STMicroelectronics

部件名 STP12NB30
下载  STP12NB30 Click to download

文件大小   56.51 Kbytes
  6 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP12NB30 数据表 (HTML) - STMicroelectronics

STP12NB30 Datasheet HTML 1Page - STMicroelectronics STP12NB30 Datasheet HTML 2Page - STMicroelectronics STP12NB30 Datasheet HTML 3Page - STMicroelectronics STP12NB30 Datasheet HTML 4Page - STMicroelectronics STP12NB30 Datasheet HTML 5Page - STMicroelectronics STP12NB30 Datasheet HTML 6Page - STMicroelectronics

STP12NB30 产品详情

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.34 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY(UPS)
■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT




类似零件编号 - STP12NB30

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类似说明 - STP12NB30

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关于 STMicroelectronics


Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车,工业和消费者市场的各种应用提供了广泛的产品,包括微控制器,传感器,功率放大器和集成电路。

Stmicroelectronics成立于1987年,在1​​00多个国家 /地区开展业务,是世界上最大的半导体公司之一。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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