制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
2SA1316
|
225Kb / 4P |
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
|
2SC3381
|
211Kb / 3P |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE, MAIN AMPLIFIERS)
|
2SA1349
|
223Kb / 3P |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPL
|
2SC732TM
|
211Kb / 3P |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
2SC3324
|
218Kb / 3P |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
E-Tech Electronics LTD |
GBC338
|
189Kb / 3P |
The GBC338 is designed for drive and output-stages of audio amplifiers
|
GBC558
|
186Kb / 2P |
The GBC558 is designed for drive and output-stages of audio amplifiers
|
GBC546
|
167Kb / 2P |
The GBC546 is designed for drive and output-stages of audio amplifiers
|
GBC547
|
171Kb / 2P |
The GBC547 is designed for drive and output-stages of audio amplifiers
|
GBC557
|
186Kb / 2P |
The GBC557 is designed for drive and output-stages of audio amplifiers
|