N0301N-T1-AT 数据表(PDF)

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N0301N-T1-AT 数据表 (PDF) - Renesas Technology Corp

N0301N-T1-AT Datasheet PDF - Renesas Technology Corp


部件名	N0301N-T1-AT

下载	N0301N-T1-AT 下载

文件大小	261.6 Kbytes

页	8 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0301N-T1-AT Datasheet (PDF)

下载数据表


部件名	N0301N-T1-AT

下载	N0301N-T1-AT Click to download

文件大小	261.6 Kbytes

页	8 Pages

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

功能描述	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0301N-T1-AT 数据表 (HTML) - Renesas Technology Corp

N0301N-T1-AT Datasheet HTML 1Page - Renesas Technology Corp

N0301N-T1-AT Datasheet HTML 2Page - Renesas Technology Corp

N0301N-T1-AT Datasheet HTML 3Page - Renesas Technology Corp

N0301N-T1-AT Datasheet HTML 4Page - Renesas Technology Corp

N0301N-T1-AT Datasheet HTML 5Page - Renesas Technology Corp

N0301N-T1-AT Datasheet HTML 6Page - Renesas Technology Corp

N0301N-T1-AT Datasheet HTML 7Page - Renesas Technology Corp

N0301N-T1-AT Datasheet HTML 8Page - Renesas Technology Corp

N0301N-T1-AT 产品详情

DESCRIPTION
The N0301N is a switching device which can be driven directly by a 4.0 V power source.
The N0301N features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 36 mΩ MAX. (VGS = 10 V, ID = 2.25 A)
RDS(on)2 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.25 A)
RDS(on)3 = 130 mΩ MAX. (VGS = 4.0 V, ID = 2.25 A)
• Built-in gate protection diode

类似零件编号 - N0301N-T1-AT

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	N0301N	484Kb / 9P	N-Channel 30-V (D-S) MOSFET
Renesas Technology Corp	N0301N	261Kb / 8P	MOS FIELD EFFECT TRANSISTOR

More results

类似说明 - N0301N-T1-AT

制造商	部件名	数据表	功能描述
NEC	UPA2451	108Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA1870	82Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA2450	75Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA620TT	67Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA677TB	58Kb / 6P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA1806	64Kb / 6P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA1874B	145Kb / 7P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Technology Corp	PA1900	197Kb / 10P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	2SK3576	202Kb / 10P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	2SK3664	273Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	PA1857	209Kb / 10P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

More results

关于 Renesas Technology Corp

Renesas Technology Corp是一家日本半导体公司，可为汽车，工业和消费者市场中的各种应用提供广泛的微控制器，芯片以及模拟和电源设备。
该公司于2010年通过NEC Electronics Corporation and Renesas Technology Corporation合并成立。
Renesas是世界上最大的微控制器供应商之一，并以其在物联网（IoT），人工智能（AI）和汽车电子产品等领域的高级技术开发方面的专业知识而闻名。
该公司在20多个国家 /地区开展业务，其产品用于广泛的应用。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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