High-Speed IGBT for 20-50 kHz Switching Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 2500V~ Electrical Isolation • Optimized for Low Switching Losses • Square RBSOA • Positive Thermal Coefficient of Vce(sat) • Anti-Parallel Ultra Fast Diode • High Current Handling Capability • International Standard Package Advantages • High Power Density • Low Gate Drive Requirement Applications • High Frequency Power Inverters • UPS • Motor Drives • SMPS • PFC Circuits • Battery Chargers • Welding Machines • Lamp Ballasts
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