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IRF423 数据表 (PDF) - New Jersey Semi-Conductor Products, Inc.

IRF423 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.
部件名 IRF423
下载  IRF423 下载

文件大小   142.02 Kbytes
  3 Pages
制造商  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
网页  http://www.njsemi.com
标志 NJSEMI - New Jersey Semi-Conductor Products, Inc.
功能描述 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

IRF423 Datasheet (PDF)

Go To PDF Page 下载 数据表
IRF423 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.

部件名 IRF423
下载  IRF423 Click to download

文件大小   142.02 Kbytes
  3 Pages
制造商  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
网页  http://www.njsemi.com
标志 NJSEMI - New Jersey Semi-Conductor Products, Inc.
功能描述 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

IRF423 数据表 (HTML) - New Jersey Semi-Conductor Products, Inc.

IRF423 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc. IRF423 Datasheet HTML 2Page - New Jersey Semi-Conductor Products, Inc. IRF423 Datasheet HTML 3Page - New Jersey Semi-Conductor Products, Inc.

IRF423 产品详情

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 2.2A and 2.5A, 450V and 500V
• rDS(ON)= 3-Ofi and 4.0Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature




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