Description The AT49BV16X4(T) is 2.7- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball µBGA packages. Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout – Two 16K Word (32K Byte) Sectors with Individual Write Lockout • Fast Word Program Time - 20 µs • Fast Sector Erase Time - 200 ms • Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors • Erase Suspend Capability – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector • Low-power Operation – 25 mA Active – 10 µA Standby • Data Polling, Toggle Bit, Ready/Busy for End of Program Detection • Optional VPP Pin for Fast Programming • RESET Input for Device Initialization • Sector Program Unlock Command • TSOP, CBGA, and µBGA Package Options • Top or Bottom Boot Block Configuration Available
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