制造商 | 部件名 | 数据表 | 功能描述 |
SHENZHEN DOINGTER SEMIC... |
NB003PG
|
1Mb/5P
|
P-Channel MOSFET uses advanced trench technology
|
Kyocera Kinseki Corpota... |
NB06HA15
|
920Kb/7P
|
Schottky Barrier Diode
|
NB06HA20
|
931Kb/7P
|
Schottky Barrier Diode
|
NB06HSA065
|
1Mb/7P
|
Schottky Barrier Diode
|
NB06HSA08
|
1Mb/7P
|
Schottky Barrier Diode
|
Nihon Inter Electronics... |
NB06HSA12
|
402Kb/1P
|
Schottky Barrier Diode
|
Kyocera Kinseki Corpota... |
NB06HSA12
|
993Kb/7P
|
Schottky Barrier Diode
|
National Instruments Co... |
NB06HSA12
|
402Kb/1P
|
SBD
|
Kyocera Kinseki Corpota... |
NB06QSA035
|
1Mb/7P
|
Schottky Barrier Diode
|
National Instruments Co... |
NB06QSA035
|
253Kb/1P
|
SBD
|
Kyocera Kinseki Corpota... |
NB06QSA045
|
985Kb/7P
|
Schottky Barrier Diode
|
Nihon Inter Electronics... |
NB06QSA045
|
304Kb/1P
|
Schottky Barrier Diode
|
National Instruments Co... |
NB06QSA045
|
304Kb/1P
|
SBD
|
Nihon Inter Electronics... |
NB06QSA065
|
273Kb/1P
|
Schottky Barrier Diode
|
Kyocera Kinseki Corpota... |
NB06QSA065
|
1,005Kb/7P
|
Schottky Barrier Diode
|
National Instruments Co... |
NB06QSA065
|
273Kb/1P
|
SBD
|