| 制造商 | 部件名 | 数据表 | 功能描述 |
Rohm |
RU1C002ZP
|
975Kb/6P
|
1.2V Drive Pch MOSFET
|
| Search Partnumber :
Start with "RU1C002ZP" -
Total : 96 ( 1/5 Page) |
Rohm |
RU1C002UN
|
964Kb/6P |
1.2V Drive Nch MOSFET
|
|
RU1C001UN
|
2Mb/13P |
Nch 20V 100mA Small Signal MOSFET
|
|
RU1C001ZP
|
2Mb/13P |
Pch -20V -100mA Small Signal MOSFET
|
EIC discrete Semiconduc... |
RU1C
|
181Kb/2P |
FAST RECOVERY RECTIFIER DIODE
Rev. 03:February 28, 2014 |
Samsung semiconductor |
RU1005
|
4Mb/20P |
Passive components sales offices
|
Ruichips Semiconductor ... |
RU1088R
|
414Kb/11P |
N-Channel Advanced Power MOSFET
|
|
RU120N15Q
|
486Kb/11P |
N-Channel Advanced Power MOSFET
|
|
RU120N15R
|
486Kb/11P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU120N15R
|
1Mb/7P |
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU12200R
|
444Kb/8P |
N-Channel Advanced Power MOSFET
|
|
RU140N10R
|
455Kb/11P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU140N10R
|
1Mb/5P |
N-Channel MOSFET uses advanced SGT technology
|
Samsung semiconductor |
RU1608
|
4Mb/20P |
Passive components sales offices
|
Ruichips Semiconductor ... |
RU16P4M4
|
355Kb/8P |
P-Channel Advanced Power MOSFET
|
|
RU16P8M4
|
321Kb/8P |
P-Channel Advanced Power MOSFET
|
|
RU190N08
|
378Kb/11P |
N-Channel Advanced Power MOSFET
Rev. C - JAN., 2010 |
|
RU190N08Q
|
390Kb/11P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU190N08R
|
963Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
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