2N60 数据表, PDF - Datasheet Search Engine

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捷径	2N60(2283) 被推存结果.
如同	12N60(14) 22N60(2) 2N60(23) 2N60A(1) 2N60B(1) 2N60D(1) 2N60F(1) 2N60G(1) 2N60H(1) 2N60K(2) 2N60L(2) 2N60P(1) 2N60T(1) 2N60Z(1) 82N60(1) B2N60(6) D2N60(6) E2N60(6) F2N60(7) I2N60(7) L2N60(1)
开始	2N60(907) 2N60-(17) 2N602(54) 2N603(118) 2N604(101) 2N605(137) 2N606(10) 2N607(100) 2N608(18) 2N609(26) 2N60G(69) 2N60K(62) 2N60L(164) 2N60Z(18)
结尾	2N60(284) 02N60(35) 12N60(61) 22N60(9) 32N60(4) 42N60(1) 52N60(2) 72N60(2) 82N60(1) A2N60(1) B2N60(4) D2N60(24) E2N60(1) F2N60(22) I2N60(6) J2N60(2) K2N60(1) L2N60(4) M2N60(4) P2N60(15) Q2N60(1) R2N60(3) S2N60(3) T2N60(5) U2N60(15) V2N60(2) W2N60(3) X2N60(1) *Y2N60(2)
包括	2N60(1064) 2N60A(3) 2N60C(2) 2N60D(2) 2N60G(18) 2N60H(3) 2N60K(7) 2N60L(18) 2N60S(6) 2N60_(6)

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2N60 数据表, PDF

搜索部分号码 : Start with "2N60" - 的资料共 : 912 ( 10/46 Page)

制造商	部件名	数据表	功能描述
Central Semiconductor C...	2N6039	346Kb/2P	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
STMicroelectronics	2N6039	246Kb/6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
ON Semiconductor	2N6039	85Kb/6P	Plastic Darlington Complementary Silicon Power Transistors May, 2006 ??Rev. 13
Savantic, Inc.	2N6039	105Kb/3P	Silicon NPN Power Transistors
ON Semiconductor	2N6039G	150Kb/6P	Plastic Darlington Complementary Silicon Power Transistors December, 2013 ??Rev. 15
	2N6039G	85Kb/6P	Plastic Darlington Complementary Silicon Power Transistors May, 2006 ??Rev. 13
	2N6039G	133Kb/6P	Plastic Darlington Complementary Silicon Power Transistors September, 2008 ??Rev. 14
Continental Device Indi...	2N6039NPN	131Kb/4P	SILICON POWER DARLINGTON TRANSISTORS
Central Semiconductor C...	2N6040	260Kb/2P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
ON Semiconductor	2N6040	152Kb/6P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 10
Mospec Semiconductor	2N6040	199Kb/4P	POWER TRANSISTORS(10A,80W)
Inchange Semiconductor ...	2N6040	151Kb/2P	isc Silicon PNP Darlington Power Transistor
ON Semiconductor	2N6040	174Kb/6P	COMPLEMENTARY SILICON POWER TRANSISTORS April, 2002 ??Rev. 4
Boca Semiconductor Corp...	2N6040	205Kb/4P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Central Semiconductor C...	2N6040	71Kb/1P	NPN SILICON TRANSISTOR
ON Semiconductor	2N6040	114Kb/8P	Plastic Medium-Power Complementary Silicon Transistors April, 2002 ??Rev. 4
	2N6040	94Kb/6P	Plastic Medium?뭁ower Complementary Silicon Transistors May, 2006 ??Rev. 7
	2N6040	113Kb/6P	Plastic Medium-Power Complementary Silicon Transistors November, 2007 - Rev. 8
Central Semiconductor C...	2N6040	265Kb/2P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
New Jersey Semi-Conduct...	2N6040	241Kb/2P	POWER DERATING

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的简要描述 2N60

2N60是一种N渠道MOSFET，可针对高压电源应用进行优化，提供快速开关，低门电荷和较低状态阻力等功能。它还旨在承受坚固的雪崩条件。这些功能使其常用于电源，PWM电动机控制，直流电动机转换器和桥梁电路中。

这是2N60特征的摘要：

排水到源电压（v_dss）：它可以忍受高达600V，这是关闭MOSFET时排水和源之间的最大电压。

源电压（V_GSS）的门：它支持±30V源电压的门。

排水电流（I_D）：2N60可以维持2A的排水电流，表明最大电流可以连续流过排水端。

功率耗散（P_D）：它的功率耗散等级为23W，决定在超过最大连接温度之前可以处理的功率。

连接温度（T_J）：工作连接温度最高可达150°C。

存储温度（T_STG）：该组件可以在-55至 +150°C的温度下存储。

对于特定的实现，该设备在10V的V_GS下提供3.8Ω的低电阻。低门电荷（典型在9.0NC处）和低反向传递电容（CRSS =典型5.0 pf）有助于快速开关和提高效率。这些规格旨在确保MOSFET可以以效率和可靠性为电力管理任务提供所需的性能。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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