2SC1847 / Savantic, Inc. - 数据表(PDF) Chat AI

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Part No.	2SC1847
Manufacturer	SAVANTIC
Size	130 Kbytes
Pages	4 pages
Description	Silicon NPN Power Transistors

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# Silicon NPN Power Transistors 2SC1847

## DESCRIPTION
· Package: TO-126
· Complementary to: 2SA886
· Features: Low collector saturation
· Application: Medium output power amplification

## PINNING
· 1: Emitter
· 2: Collector (connected to mounting base)
· 3: Base

## ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
· VCBO (Collector-base voltage): 50 V
· VCEO (Collector-emitter voltage): 40 V
· VEBO (Emitter-base voltage): 5 V
· IC (Collector current DC): 1.5 A
· ICM (Collector current peak): 3 A
· PC (Collector power dissipation): 1.2W (without heatsink), 5W (with 100x100x2mm A1 heatsink)
· Tj (Junction temperature): 150°C
· Tstg (Storage temperature): -55 ~ 150°C

## CHARACTERISTICS (Tj=25°C)
· V(BR)CEO (Collector-emitter breakdown voltage): 40 V
· V(BR)CBO (Collector-base breakdown voltage): 50 V
· VCEsat (Collector-emitter saturation voltage): 1.0 V
· VBEsat (Base-emitter saturation voltage): 1.5 V
· ICBO (Collector cut-off current): 1 µA
· ICEO (Collector cut-off current): 100 µA
· IEBO (Emitter cut-off current): 10 µA
· hFE (DC current gain): 80-220
· COB (Output capacitance): 35 pF
· fT (Transition frequency): 150 MHz

## hFE Classifications
· Q: 80-160
· R: 120-220

## PACKAGE OUTLINE
· Refer to Fig.2 for outline dimensions.