IRF510S / Vishay Siliconix - 数据表(PDF) Chat AI

IRF510S Datasheet with Chat AI

Hello, Please ask a question about IRF510S Datasheet

# Example questions: ➢ Referring to figure 12a, what is the purpose of the inductive load and diode in the unclamped inductive test circuit?
➢ What does the 't' axis represent in relation to the maximum effective transient thermal impedance?
➢ Where can you find additional resources like package drawings, part marking details, and reliability data for these devices?

Part No.	IRF510S
Manufacturer	VISHAY
Size	176 Kbytes
Pages	9 pages
Description	Power MOSFET

Datasheet Summary with AI

# IRF510S, SiHF510S Power MOSFET

## Features
· Halogen-free (IEC 61249-2-21)
· Surface Mount, available in Tape & Reel
· Dynamic dV/dt & Repetitive Avalanche Rated
· 175 °C Operating Temperature
· Fast Switching, Ease of Paralleling
· RoHS Compliant

## Description
· Third generation Power MOSFET providing fast switching, rugged design, low on-resistance, and cost-effectiveness.
· D²PAK (TO-263) surface mount package, capable of up to HEX-4 die sizes.
· Suitable for high current applications (up to 2.0W dissipation).

## Product Summary
· VDS: 100V
· RDS(on): 0.54 Ω (VGS = 10V)
· Configuration: Single N-Channel MOSFET

## Absolute Maximum Ratings (Tc = 25°C)
· VDS: 100V
· VGS: ±20V
· ID (TC = 25°C): 5.6A, (TC = 100°C): 4.0A
· EAS: 100mJ
· PD (TC = 25°C): 43W, (PCB Mount): 3.7W

## Thermal Resistance
· RthJA: 62°C/W (max)
· RthJC: 3.5°C/W (max)

## Key Specifications (TJ = 25°C)
· VDS(th): 2.0 – 4.0V
· Qg (Max): 8.3 nC
· Qgs: 2.3 nC
· Qgd: 3.8 nC
· Ciss: 180 pF
· Coss: 81 pF
· Crss: 15 pF

## Ordering Information
· SiHF510S-GE3 / SiHF510STRL-GE3a / SiHF510STRR-GE3a: Lead (Pb)-free & Halogen-free
· IRF510SPbF / IRF510STRLPbFa / IRF510STRRPbFa: Lead (Pb)-free
· SiHF510S-E3 / SiHF510STL-E3a / SiHF510STR-E3a: Lead (Pb)-free