| 制造商 | 部件名 | 数据表 | 功能描述 |

VIGO Photonics S.A.
|
PCI |
695Kb/2P |
1.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoconductive detectors 08/11/2020 |
| PEMI |
744Kb/2P |
2.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoelectromagnetic detectors 09/11/2020 |
| PVI |
700Kb/2P |
2.5 – 6.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detectors 25/09/2020 |
| PCI-3TE |
774Kb/2P |
1.0 – 15.0 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detectors 08/11/2020 |
| PCI-4TE |
774Kb/2P |
1.0 – 16.0 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detectors 25/05/2022 |
| PVIA |
645Kb/2P |
2.4 – 5.3 μm InAs and InAsSb ambient temperature, optically immersed photovoltaic detectors 04/05/2022 |
| PVI-2TE |
799Kb/2P |
2 – 12 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detectors 25/09/2020 |
| PVI-4TE |
799Kb/2P |
2 – 12 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detectors 24/02/2021 |
| PCI-2TE |
797Kb/2P |
1.0 – 15.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detectors 08/11/2020 |
| PVI-3TE |
796Kb/2P |
2 – 12 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detectors 04/03/2021 |
| PVMI |
699Kb/2P |
2 – 12 μm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detectors 25/09/2020 |
| PVI4TE6TO8-36-DTE |
722Kb/2P |
3.0 – 6.9 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector 25/09/2020 |
| PCI3TE12TO8-36-DTE |
719Kb/2P |
2 – 14 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector 25/09/2020 |
| PVMI-2TE |
769Kb/2P |
2.0 – 13.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detectors 09/11/2020 |
| PVMI-4TE |
770Kb/2P |
2.0 – 13.0 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detectors 09/11/2020 |
| PVMI-3TE |
767Kb/2P |
2.0 – 13.0 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detectors 09/11/2020 |
| PVIA-2TE |
697Kb/2P |
2.4 – 5.3 μm InAs and InAsSb two-stage thermoelectrically cooled, optically immersed photovoltaic detectors 24/06/2022 |
| PVI-4-1 |
671Kb/2P |
PVI-4-1×1-TO39-NW-36 2.4 – 4.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detector 11/04/2022 |
| UM-I-6 |
825Kb/2P |
3.0 – 6.7 μm and DC – 1 MHz HgCdTe universal IR detection module with optically immersed photovoltaic detector 14/09/2020 |
| PVI-5-1 |
671Kb/2P |
PVI-5-1×1-TO39-NW-36 2.4 – 5.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detector 25/09/2020 |