| 制造商 | 部件名 | 数据表 | 功能描述 |

Emerging Memory & Logic...
|
EMC646SP16J |
602Kb/65P |
4Mx16 bit CellularRAM |
| EMC646SP16K |
507Kb/52P |
4Mx16 bit CellularRAM AD-MUX |
| EMC326SP16AJ |
612Kb/64P |
2Mx16 bit CellularRAM |
| EMC326SP16AK |
489Kb/52P |
2Mx16 bit CellularRAM AD-MUX |

Samsung semiconductor
|
K3S7V2000M-TC |
1Mb/27P |
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM |
| KM23C64000T |
71Kb/4P |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM |
| K3P7V1000 |
62Kb/4P |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM |
| K1S6416BCC |
138Kb/10P |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |

Infineon Technologies A...
|
HYE18P16161AC |
641Kb/33P |
16M Asynchronous/Page CellularRAM V2.0, December 2003 |
| HYE18P32160AC |
1Mb/53P |
32M Synchronous Burst CellularRAM V2.0, December 2003 |

Samsung semiconductor
|
K1S64161CC |
204Kb/10P |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |

Infineon Technologies A...
|
HYE18P32161AC |
641Kb/33P |
32M Asynchronous/Page CellularRAM V2.0, December 2003 |

Samsung semiconductor
|
K1B6416B6C |
768Kb/46P |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |

Hynix Semiconductor
|
HY5DV641622AT |
276Kb/27P |
64M(4Mx16) DDR SDRAM |

FIDELIX
|
CMS6416LAX-15EX |
1Mb/46P |
64M(4Mx16) Low Power SDRAM |
| CMS6416LAX-75XX |
1Mb/46P |
64M(4Mx16) Low Power SDRAM |

Alliance Semiconductor ...
|
AS4LC8M8S0 |
566Kb/24P |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |

Samsung semiconductor
|
K5T6432YT |
606Kb/40P |
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM |
| KMM5324004BSW |
401Kb/19P |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |

Integrated Silicon Solu...
|
IS41LV16400 |
143Kb/19P |
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |