| 制造商 | 部件名 | 数据表 | 功能描述 |

Shanghai Leiditech Elec...
|
NSP120 |
904Kb/8P |
Common Parameters |

Infineon Technologies A...
|
CFH800 |
73Kb/7P |
Typical Common Source S - Parameters 01.03.2002 |

COREBAI Microelectronic...
|
CBM94AD67 |
1Mb/13P |
Product parameters |

Roithner LaserTechnik G...
|
RLDH660-40-3 |
101Kb/1P |
main technical parameters |
| RLDH808-1200-5 |
45Kb/1P |
main technical parameters |
| RLLH635-4-3 |
107Kb/1P |
main technical parameters |
| RLLI635-2.5-3 |
80Kb/1P |
main technical parameters |
| RLDC650-2.2-3 |
155Kb/1P |
main thchnical parameters |
| RLDE405-12-6 |
115Kb/1P |
main technical parameters |
| RLDH650-24-3 |
70Kb/1P |
main technical parameters |
| RLDB808-500-5 |
125Kb/1P |
main technical parameters |
| RLDD532-10-3 |
150Kb/1P |
main technical parameters |

RF Micro Devices
|
VCO-110 |
138Kb/1P |
Nominal Operating Parameters |
| VCO-111 |
137Kb/1P |
Nominal Operating Parameters |
| VCO-118 |
137Kb/1P |
Nominal Operating Parameters |

Samsung semiconductor
|
MR16R1622DF0 |
442Kb/16P |
Key Timing Parameters |

Roithner LaserTechnik G...
|
RLDB808-350-3 |
106Kb/1P |
main technical parameters |
| RLDC635-2.2-3 |
178Kb/1P |
main technical parameters |
| RLDH830-3-3 |
115Kb/1P |
main technical parameters |

RF Micro Devices
|
VCO-112 |
137Kb/1P |
Nominal Operating Parameters |