PRINCIPLE Datasheet(PDF) - SICDS50V6_13

制造商	部件名	数据表	功能描述
SEC Electronics Inc.	SICDS50V6	225Kb/4P	Hall effect measuring principle
Vishay Siliconix	981HE	495Kb/6P	Easy mounting principle Revision: 27-Mar-15
SEC Electronics Inc.	SICDS100V6	225Kb/4P	Hall effect measuring principle
Infineon Technologies A...	TLE5012B	2Mb/50P	Giant Magneto Resistance (GMR)-based principle Rev. 2.0, 2014-02
	TLE5014	1Mb/45P	Giant Magneto Resistance (GMR)-based principle Rev. 1.0 2018-04-04
	TLE5014D	438Kb/13P	Giant Magneto Resistance (GMR)-based principle Rev. 1.0 2018-04-04
PHOENIX CONTACT	1810191	117Kb/4P	Well-known connection principle allows worldwide use
PHOENIX CONTACT	1936186	105Kb/4P	Well-known connection principle allows worldwide use
List of Unclassifed Man...	RX3310A	73Kb/2P	Principle and Application of UHF Receiving Chip RX3310A
Shenzhen Huazhimei Semi...	HM224	602Kb/10P	touch IC designed using capacitive sensing principle
STMicroelectronics	AN2927	161Kb/12P	RC acquisition principle for touch sensing applications
Littelfuse	08097300	324Kb/1P	The dual pole remote control current isolating switches described in this section are different in shape and working principle
Littelfuse	08094400	542Kb/2P	The single pole remote control current isolating switches described in this datasheet section are different in size, shape and working principle
List of Unclassifed Man...	CR5224	342Kb/21P	This article mainly introduces the characteristics and detailed working principle of CR522X, and describes a flyback isolated AC-DC switch using CR522X.
Infineon Technologies A...	IPB60R120C7	1Mb/15P	CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Rev.2.0,2015-11-30
Omron Electronics LLC	B6TS	210Kb/6P	OMRON expands its switch product range by introducing the new touch sensor switch family B6TS which is based on a capacitive measurement principle
Infineon Technologies A...	IPB60R060C7	1Mb/15P	CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Rev.2.0,2015-11-30

PRINCIPLE 数据表, PDF

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