| 制造商 | 部件名 | 数据表 | 功能描述 |

ATMEL Corporation
|
AT45DB321 |
320Kb/21P |
Page Program Operation |
| AT45D011 |
277Kb/21P |
Page Program Operation |
| AT28C256 |
665Kb/25P |
Automatic Page Write Operation |
| AT28C010 |
476Kb/17P |
Automatic Page Write Operation |
| AT28C040 |
385Kb/15P |
Automatic Page Write Operation |
| AT28C64B |
313Kb/18P |
Automatic Page Write Operation |
| AT28C010-12DK |
361Kb/19P |
Automatic Page Write Operation |
| AT28HC64BF |
373Kb/16P |
Automatic Page Write Operation |
| AT28HC64B |
394Kb/17P |
Automatic Page Write Operation |
| AT28HC256N |
243Kb/13P |
Automatic Page Write Operation |
| AT28BV256 |
301Kb/17P |
Automatic Page Write Operation |

Omron Electronics LLC
|
3G2A2-CN221 |
1Mb/59P |
Ladder Program I/O Unit Operation Manual |

ATMEL Corporation
|
AT25F512 |
268Kb/18P |
Byte Mode and 256-byte Page Mode for Program Operations |
| AT25F1024 |
268Kb/18P |
Byte Mode and 256-byte Page Mode for Program Operations |
| AT25F1024A |
623Kb/20P |
Byte Mode and 256-byte Page Mode for Program Operations |
| AT25F2048 |
495Kb/19P |
Byte Mode and 256-byte Page Mode for Program Operations |
| AT25F4096 |
358Kb/19P |
Byte Mode and 256-byte Page Mode for Program Operations |

fujitsu semiconductor
|
MBM29PDS322TE |
694Kb/66P |
32M (2M x 16) BIT Page Dual Operation |

Winbond
|
W19B160BTT7H |
542Kb/47P |
2.7~3.6-volt write (program and erase) operations, Fast write operation |

STMicroelectronics
|
M35B32 |
633Kb/44P |
32 Kbit, 256-byte page, fast program EEPROM memory accessed by SPI bus interface May 2015 Rev 4 |