| 制造商 | 部件名 | 数据表 | 功能描述 |

STMicroelectronics
|
STH110N10F7-2 |
863Kb/19P |
N-channel 100 V, 4.9 m廓 typ.,110 A, STripFET??F7 Power MOSFETs in H짼PAK-2 and H짼PAK-6 packages November 2014 Rev 4 |
| SCT20N120AG |
487Kb/13P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 째C), in an HiP247 package Rev 3 - October 2019 |
| STH145N8F7-2AG |
677Kb/16P |
Automotive-grade N-channel 80 V, 3.3 m廓 typ., 90 A STripFET??F7 Power MOSFET in a H짼PAK-2 package June 2015 Rev 1 |
| STP80N6F6 |
465Kb/12P |
Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a TO-220 package January 2014 Rev 2 |
| A2C25S12M3 |
948Kb/18P |
ACEPACK 2 converter inverter brake, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC April 2019 Rev 4 |
| A2C35S12M3-F |
1Mb/19P |
ACEPACKTM 2 converter inverter brake, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC January 2019 Rev 4 |
| A2C35S12M3 |
968Kb/18P |
ACEPACK 2 converter inverter brake, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC April 2019 Rev 6 |
| STS8DN6LF6AG |
315Kb/14P |
Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package March 2021 Rev 2 |
| ALED1262ZT |
3Mb/69P |
Automotive-grade 12-channel LED driver with open detection, local dimming, bus driven and standalone operations February 2019 - Rev 4 |
| A2C25S12M3-F |
1Mb/18P |
ACEPACKTM 2 converter inverter brake, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC November 2018 Rev 3 |
| STGYA120M65DF2AG |
2Mb/14P |
Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package Rev 5 - November 2022 |
| STAP08DP05 |
704Kb/28P |
Low voltage 8-bit constant current LED sink driver with output error detection for automotive applications November 2015 Rev 6 |
| STB60N55F3 |
630Kb/20P |
N-channel 55 V, 6.5 m廓, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET??III Power MOSFET |
| SCTW40N120G2VAG |
210Kb/12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package Rev 3 - November 2020 |
| A1C15S12M3 |
823Kb/19P |
ACEPACKTM 1 converter inverter brake, 1200 V, 15 A, trench gate field‑stop M series IGBT with soft diode and NTC October 2018 Rev 7 |
| STB47N50DM6AG |
436Kb/14P |
Automotive-grade N-channel 500 V, 61 m typ., 38 A MDmesh™ DM6 Power MOSFET in a D²PAK package May 2018 Rev 4 |
| STEVAL-TLL007V1 |
91Kb/4P |
High-power LED driver demonstration board for dual flash with I2C interface based on the STCF05 |
| STL66N3LLH5 |
985Kb/15P |
Automotive-grade dual N-channel 30 V, 4.5 m廓 typ., 80 A STripFET??H5 Power MOSFET in a PowerFLAT??5x6 package January 2016 Rev 3 |
| STF110N10F7 |
1Mb/16P |
N-channel 100 V, 5.1 m廓 typ., 110 A, STripFET??VII DeepGATE?? Power MOSFETs in TO-220FP and TO-220 packages July 2013 Rev 2 |
| STL76DN4LF7AG |
984Kb/16P |
Automotive-grade dual N-channel 40 V, 5 m廓 typ., 40 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 DI July 2017 Rev 5 |