| 制造商 | 部件名 | 数据表 | 功能描述 |

WOLFSPEED, INC.
|
AMS4711 |
539Kb/8P |
Miniaturized pressure transmitter with 0 .. 5 V output March 2015 Rev. 4.0 |
| AMS3011 |
511Kb/8P |
Miniaturized pressure transmitter with 0 .. 5 V output April 2016 Rev. 1.0 |
| AMS2710 |
597Kb/8P |
PCB pressure sensor module with 0 .. 10 V output February 2018 Rev. 1.0 |
| AMS4710 |
610Kb/8P |
Miniaturized pressure transmitter with analog 0 ... 10 V output March 2020 Rev. 1.0 |
| PTGA090304MD |
1Mb/12P |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 – 960 MHz Rev. 04.2, 2022-1-27 |
| PTMC210404MD |
847Kb/8P |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 – 2200 MHz Rev. 04.1, 2022-1-27 |
| CGH60008D |
977Kb/9P |
8 W, 6.0 GHz, GaN HEMT Die Rev. 1.2, 2022-11-23 |
| CMPA1D1J001S |
912Kb/18P |
12.7 – 18 GHz, 1 W GaN HPA Rev. 0.0 February 2023 |
| CSD01060A |
1Mb/9P |
600 V, 1 A Silicon Carbide Schottky Diode Rev. 18, March 2023 |
| CAB008A12GM3 |
2Mb/12P |
1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Rev. 1, April 2023 |
| C3D08065A |
1Mb/9P |
3rd Generation 650 V, 8 A Silicon Carbide Schottky Rev. 6, March 2023 |
| CAB008M12GM3 |
2Mb/12P |
1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Rev. 2, April 2023 |
| CG2H40010 |
1Mb/14P |
10 W, DC - 8 GHz, RF Power GaN HEMT Rev. 2.0, 2022-7-7 |
| C6D08065A |
1Mb/9P |
6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 1, March 2023 |
| C4D08120A |
1Mb/9P |
4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode Rev. 4, March 2023 |
| C6D08065G |
1Mb/6P |
6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 0, JULY 2021 |
| C6D08065Q |
679Kb/7P |
6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 0, DECEMBER 2021 |
| CMPA0060002F1 |
1Mb/10P |
2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier Rev. 1.0, 2022-8-26 |
| CMPA0530002S |
2Mb/20P |
2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC Rev. 1.3, 2022-12-8 |
| E4D02120E |
715Kb/6P |
4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode Rev. 0, OCTOBER 2021 |