| 制造商 | 部件名 | 数据表 | 功能描述 |

Infineon Technologies A...
|
PTMA180402M |
494Kb/14P |
Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz Rev. 08, 2011-08-10 |
| PTRA082808NF |
534Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz Rev. 04.1, 2018-01-30 |
| PXAC210552MD |
466Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 03.1, 2017-01-25 |
| PTFC262808FV |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22 |
| PTRA094808NF |
463Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 ??960 MHz Rev. 03, 2017-08-21 |
| PXFC211507SC |
201Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03 |
| PXFC193808SV |
196Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2015-01-13 |
| PTFB091802FC |
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10 |
| PXAC261002FC |
162Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz Rev. 03.3, 2016-06-15 |
| PXAC192908FV |
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz Rev. 02.3, 2016-06-17 |
| PTVA120251EA |
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz Rev. 04.2, 2016-04-19 |
| PTFC270101M |
410Kb/22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26 |
| PTFC210202FC |
655Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22 |
| PTFB193404F |
244Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz Rev. 04, 2011-02-07 |
| PTFB090901EA |
226Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz Rev. 04, 2012-02-23 |
| PTFB091507FH |
1,015Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz Rev. 03.1, 2016-06-09 |
| PTFA220121M |
381Kb/21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23 |
| PTAC210802FC |
650Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17 |
| PXAC243502FV |
1Mb/10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22 |
| PXAC203302FV |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22 |