| 制造商 | 部件名 | 数据表 | 功能描述 |

Infineon Technologies A...
|
PXAC182002FC |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17 |
| PTVA035002EV |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz Rev. 05.2, 2016-06-08 |
| PTRA093302FC |
175Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz Rev. 03, 2016-03-16 |
| PTFC262808SV |
180Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02 |
| PTFC262157FH |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz Rev. 03.1, 2016-06-21 |
| PTFC261402FC |
231Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz Rev. 05, 2016-06-21 |
| PTFC260202FC |
870Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz Rev. 03.3, 2016-06-21 |
| PTFB213208FV |
221Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03 |
| PTFB193404F |
665Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 ??1990 MHz Rev. 05.2, 2016-06-14 |
| PXAC200902FC |
489Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11 |
| PXAC213308FV |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04 |
| PTVA082407NF |
453Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz Rev. 02.5, 2017-07-18 |
| PTVA092407NF |
434Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz Rev. 02.4, 2017-02-07 |
| DEMO-IDP2308-120W |
3Mb/41P |
120 W 24 V 3.5 A 12 V 3 A SMPS demonstrator with IDP2308 Revision 1.0 2019-04-01 |
| AN_201703_PL52_016 |
3Mb/36P |
PFC demoboard based on CoolMOS??P7 600 V 800 W 65 kHz platinum server design V 1.0 2017-03-02 |
| PXAC260602FC |
551Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz Rev. 02.4, 2016-06-22 |
| PTF141501E |
292Kb/12P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz Rev. 04, 2008-02-13 |
| PTMC210204MD |
219Kb/10P |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ??2200 MHz Rev. 03, 2016-06-14 |
| PTF180601 |
233Kb/11P |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz 2004-05-03 |
| EVAL_3K3W_BIDI_PSFB |
4Mb/44P |
3300 W 54 V bi-directional phase-shift fullbridge with 600 V CoolMOS CFD7 and XMC Revision 1.0 2018-05-02 |