| 制造商 | 部件名 | 数据表 | 功能描述 |

Infineon Technologies A...
|
FZ2000R33HE4 |
739Kb/10P |
IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode V2.1 2019-07-24 |
| FZ1200R33HE3 |
470Kb/9P |
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode 2010-07-16 revision:2.1 |
| FZ1800R12HE4_B9 |
610Kb/9P |
IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 2015-09-29 revision:V2.4 |
| FZ2400R12HE4_B9 |
609Kb/9P |
IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 2015-09-29 revision:V2.4 |
| PTF081301E |
289Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Rev. 03, 2005-05-02 |
| PTFA041501GL |
502Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420-500 MHz Rev. 03, 2009-04-21 |
| PTFA091201GL |
391Kb/10P |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz Rev. 03, 2009-03-31 |
| PTFA241301E |
248Kb/12P |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz Rev. 05, 2007-05-11 |
| PTFB183404E |
727Kb/18P |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz Rev. 04, 2010-11-17 |
| PTFB211503EL |
734Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ??2170 MHz Rev. 04, 2011-03-07 |
| PTFB212503EL |
978Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz Rev. 07, 2010-11-04 |
| PTFB241402F |
556Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 03, 2010-04-19 |
| PTFA192401E |
431Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ??1990 MHz Rev. 02, 2009-04-01 |
| PTFA181001E |
408Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ??1880 MHz Rev. 02.1, 2009-02-20 |
| PTFA181001GL |
325Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ??1880 MHz Rev. 01, 2008-06-15 |
| PTFA092201E |
379Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz Rev. 03.1, 2009-02-20 |
| PTFA212401E |
495Kb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz Rev. 04, 2009-10-05 |
| PTF080101S |
172Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz 2004-10-05 |
| PTF191601F |
206Kb/10P |
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16 |
| PTFA211001E |
223Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz Rev. 03, 2008-03-04 |