| 制造商 | 部件名 | 数据表 | 功能描述 |

Infineon Technologies A...
|
PXAC201202FC |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 |
| PTVA123501EFC |
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz Rev. 05.1, 2016-04-26 |
| PTVA120501EA |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz Rev. 02.1, 2016-05-26 |
| PTVA104501EH |
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ??1215 MHz Rev. 02.1, 2016-04-19 |
| PTVA093002TC |
210Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 ??960 MHz Rev. 04, 2014-06-16 |
| PTVA030121EA |
874Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz Rev. 05.1, 2016-04-19 |
| PTVA043502EC |
1Mb/11P |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ??860 MHz Rev. 02.2, 2017-02-09 |
| PTVA120252MT |
453Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 ??1400 MHz Rev. 03.4, 2017-02-07 |
| PXFC191507FC |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz Rev. 02.1, 2016-06-22 |
| PTFA220041M |
331Kb/18P |
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz Rev. 10.1, 2016-06-01 |
| PXAC241702FC |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22 |
| PTVA042502EFC |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz Rev. 03.1, 2016-04-19 |
| PTVA101K02EV |
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 02.1, 2016-04-19 |
| PTFC270051M |
293Kb/14P |
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz Rev. 01.1, 2016-07-26 |
| PTFB212507SH |
193Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30 |
| PTVA084007NF |
491Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz Rev. 03, 2017-08-30 |
| PTVA102001EA |
241Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz Rev. 03, 2017-08-17 |
| PXAC210552FC |
206Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 02, 2015-12-04 |
| PTRA083818NF |
481Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz Rev. 05.1, 2017-03-30 |
| PTRA094252FC |
400Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 208 W, 48 V, 746 ??960 MHz Rev. 04.2, 2017-12-08 |