DESCRIPTION The HYNIX HY27(U/S)A(08/16)1G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27UAXX1G1M - 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M 1.8V Operation Product : TBD Memory Cell Array - 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks PAGE SIZE - x8 device: (512 + 16 spare) Bytes : HY27(U/S)A081G1M - x16 device: (256 + 8 spare) Words : HY27(U/S)A161G1M BLOCK SIZE - x8 device: (16K + 512 spare) Bytes : HY27(U/S)A081G1M - x16 device: (8K + 256 spare) Words : HY27(U/S)A161G1M PAGE READ / PROGRAM - Random access: 12us (max) - Sequential access: 50ns (min) - Page program time: 200us (typ) COPY BACK PROGRAM MODE - Fast page copy without external buffering FAST BLOCK ERASE - Block erase time: 2ms (Typ) STATUS REGISTER ELECTRONIC SIGNATURE Sequential Row Read Option AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download SERIAL NUMBER OPTION HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions DATA INTEGRITY - 100,000 Program/Erase cycles - 10 years Data Retention PACKAGE - HY27(U/S)A(08/16)1G1M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27(U/S)A(08/16)1G1M-T (Lead) - HY27(U/S)A(08/16)1G1M-TP (Lead Free) - HY27(U/S)A08121A-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm) - HY27(U/S)A081G1M-V (Lead) - HY27(U/S)A081G1M-VP (Lead Free) - HY27(U/S)A(08/16)121M-F(P) : 63-Ball FBGA (8.5 x 15 x 1.2 mm) - HY27(U/S)A(08/16)1G1M-F (Lead) - HY27(U/S)A(08/16)1G1M-FP (Lead Free)
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