GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. FEATURES • 3.0V & 3.3 power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • All inputs are sampled at the positive going edge of the system clock . • Burst read single-bit write operation. • DQM for masking. • Auto & self refresh. • 64ms refresh period (4K cycle). • Extended temperature operation (-25°C to 85°C). Industrial temperature operation ( -40°C to 85°C). • 90balls FBGA(-SXXX -Pb, -DXXX -Pb Free).
|