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K4S643233F-DE/P1L 数据表 (PDF) - Samsung semiconductor

K4S643233F-DE/P1L Datasheet PDF - Samsung semiconductor
部件名 K4S643233F-DE/P1L
下载  K4S643233F-DE/P1L 下载

文件大小   62.93 Kbytes
  8 Pages
制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor
功能描述 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

K4S643233F-DE/P1L Datasheet (PDF)

Go To PDF Page 下载 数据表
K4S643233F-DE/P1L Datasheet PDF - Samsung semiconductor

部件名 K4S643233F-DE/P1L
下载  K4S643233F-DE/P1L Click to download

文件大小   62.93 Kbytes
  8 Pages
制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor
功能描述 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

K4S643233F-DE/P1L 数据表 (HTML) - Samsung semiconductor

K4S643233F-DE/P1L Datasheet HTML 1Page - Samsung semiconductor K4S643233F-DE/P1L Datasheet HTML 2Page - Samsung semiconductor K4S643233F-DE/P1L Datasheet HTML 3Page - Samsung semiconductor K4S643233F-DE/P1L Datasheet HTML 4Page - Samsung semiconductor K4S643233F-DE/P1L Datasheet HTML 5Page - Samsung semiconductor K4S643233F-DE/P1L Datasheet HTML 6Page - Samsung semiconductor K4S643233F-DE/P1L Datasheet HTML 7Page - Samsung semiconductor K4S643233F-DE/P1L Datasheet HTML 8Page - Samsung semiconductor

K4S643233F-DE/P1L 产品详情

GENERAL DESCRIPTION
The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

FEATURES
• 3.0V & 3.3 power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
    -. CAS latency (1, 2 & 3).
    -. Burst length (1, 2, 4, 8 & Full page).
    -. Burst type (Sequential & Interleave).
• All inputs are sampled at the positive going edge of the system clock .
• Burst read single-bit write operation.
• DQM for masking.
• Auto & self refresh.
• 64ms refresh period (4K cycle).
• Extended temperature operation (-25°C to 85°C). Industrial temperature operation ( -40°C to 85°C).
• 90balls FBGA(-SXXX -Pb, -DXXX -Pb Free).




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