PTRA082808NF 数据表(PDF) - Cree, Inc

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PTRA082808NF 数据表 (PDF) - Cree, Inc

PTRA082808NF Datasheet PDF - Cree, Inc


部件名	PTRA082808NF

下载	PTRA082808NF 下载

文件大小	604.96 Kbytes

页	10 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz

PTRA082808NF Datasheet (PDF)

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PTRA082808NF Datasheet PDF - Cree, Inc


部件名	PTRA082808NF

下载	PTRA082808NF Click to download

文件大小	604.96 Kbytes

页	10 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz

PTRA082808NF 数据表 (HTML) - Cree, Inc

PTRA082808NF Datasheet HTML 1Page - Cree, Inc

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PTRA082808NF Datasheet HTML 8Page - Cree, Inc

PTRA082808NF Datasheet HTML 9Page - Cree, Inc

PTRA082808NF Datasheet HTML 10Page - Cree, Inc

类似零件编号 - PTRA082808NF

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTRA082808NF	534Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz Rev. 04.1, 2018-01-30
WOLFSPEED, INC.	PTRA082808NF	677Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
WOLFSPEED, INC.	PTRA082808NF-V1-R5	677Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27

类似说明 - PTRA082808NF

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTRA082808NF	534Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz Rev. 04.1, 2018-01-30
WOLFSPEED, INC.	PTRA082808NF	677Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
Infineon Technologies A...	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
Infineon Technologies A...	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
Cree, Inc	PTFC262808FV	806Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
Infineon Technologies A...	PTFB082817FH	667Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz Rev. 02, 2010-12-13
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
Infineon Technologies A...	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16

关于 Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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