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IS42S16400A 数据表 (PDF) - Integrated Silicon Solution, Inc

IS42S16400A Datasheet PDF - Integrated Silicon Solution, Inc
部件名 IS42S16400A
下载  IS42S16400A 下载

文件大小   472.39 Kbytes
  55 Pages
制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc
功能描述 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16400A Datasheet (PDF)

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IS42S16400A Datasheet PDF - Integrated Silicon Solution, Inc

部件名 IS42S16400A
下载  IS42S16400A Click to download

文件大小   472.39 Kbytes
  55 Pages
制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc
功能描述 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16400A 数据表 (HTML) - Integrated Silicon Solution, Inc

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IS42S16400A 产品详情

OVERVIEW
ISSIs 64Mb Synchronous DRAM IS42S16400A is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES
• Clock frequency:166, 133, 100 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Industrial temperature availability (133MHz, 100MHz)
• Package: 400-mil 54-pin TSOP II, a lead-free package is available.




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关于 Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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