制造商 | 部件名 | 数据表 | 功能描述 |
Samsung semiconductor |
K9F1G08U0E
|
436Kb / 38P |
1Gb E-die NAND Flash
|
Hynix Semiconductor |
H27UAG8T2B
|
1Mb / 61P |
16Gb (2048M x 8bit) NAND Flash
|
Micron Technology |
MT29F8G08DAAWCA
|
2Mb / 81P |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
|
Samsung semiconductor |
K9F2G08U0C
|
707Kb / 39P |
2Gb C-die NAND Flash
|
Micron Technology |
MT29F8G08ADADAH4D
|
1Mb / 132P |
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
|
Samsung semiconductor |
K8A2815ETE
|
984Kb / 51P |
128Mb E-die NOR FLASH
|
K8S2815ETE
|
1Mb / 55P |
128Mb E-die NOR FLASH
|
Micron Technology |
MT29F1G08
|
103Kb / 1P |
NAND Flash
|
MTFC4GMVEA-4MIT
|
479Kb / 24P |
4GB, 8GB, 16GB, 32GB, 64GB e MMC
|
Mini-Circuits |
SAV-541-D
|
321Kb / 5P |
E-PHEMT Die
|