RF Power MOSFET
♦ N-Channel Enhancement Mode
♦ Low Qgand Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 50MHz Maximum Frequency
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced low Qgprocess
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz ardous materials
Advantages
• Optimized for RF and high speed switching at frequencies to 50MHz
• Easy to mount—no insulators needed
• High power density
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