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HM609BK 数据表 (PDF) - Shenzhen Huazhimei Semiconductor Co., Ltd
HM609BK Datasheet PDF - Shenzhen Huazhimei Semiconductor Co., Ltd
部件名 HM609BK
下载  HM609BK 下载
文件大小   2096.66 Kbytes
页   8 Pages
制造商  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
网页  http://www.hmsemi.com/
标志 HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd
功能描述 N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

HM609BK Datasheet (PDF)

Go To PDF Page 下载 数据表
HM609BK Datasheet PDF - Shenzhen Huazhimei Semiconductor Co., Ltd

部件名 HM609BK
下载  HM609BK Click to download

文件大小   2096.66 Kbytes
页   8 Pages
制造商  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
网页  http://www.hmsemi.com/
标志 HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd
功能描述 N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

HM609BK 数据表 (HTML) - Shenzhen Huazhimei Semiconductor Co., Ltd




类似零件编号 - HM609BK

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类似说明 - HM609BK

制造商部件名数据表功能描述
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Stanson Technology		 ST2315SRG STANSON-ST2315SRG Datasheet
218Kb / 6P		 ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2318SRG STANSON-ST2318SRG Datasheet
221Kb / 7P		 ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ST2319SRG STANSON-ST2319SRG Datasheet
229Kb / 8P		 ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ST3401SRG STANSON-ST3401SRG Datasheet
212Kb / 6P		 ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
STC6332 STANSON-STC6332 Datasheet
421Kb / 9P		 The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
STP6308 STANSON-STP6308 Datasheet
420Kb / 6P		 STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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461Kb / 6P		 STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9527 STANSON-STP9527 Datasheet
927Kb / 7P		 STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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763Kb / 5P		 P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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938Kb / 8P		 N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
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