制造商 | 部件名 | 数据表 | 功能描述 |
saftbatteries |
LS33600
|
385Kb / 2P |
Primary Li-SOCl2 cell High energy density 3.6 V D-size bobbin cell
|
Micro Analog systems |
MAS6011B
|
181Kb / 10P |
Solar Cell Energy Harvesting
|
Stanson Technology |
ST2318SRG
|
221Kb / 7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
ST2319SRG
|
229Kb / 8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
saftbatteries |
LS14500EX
|
401Kb / 2P |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
LS14500
|
381Kb / 2P |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
LS17500
|
459Kb / 2P |
3.6 V Primary lithium-thionyl chloride High energy density A-size bobbin cell
|
LS26500
|
467Kb / 2P |
3.6 V Primary lithium-thionyl chloride High energy density C-size bobbin cell
|
Stanson Technology |
STP9527
|
927Kb / 7P |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
ST2315SRG
|
218Kb / 6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|