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SCTW90N65G2V 数据表 (PDF) - STMicroelectronics
SCTW90N65G2V Datasheet PDF - STMicroelectronics
部件名 SCTW90N65G2V
下载  SCTW90N65G2V 下载
文件大小   402.03 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package

SCTW90N65G2V Datasheet (PDF)

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SCTW90N65G2V Datasheet PDF - STMicroelectronics

部件名 SCTW90N65G2V
下载  SCTW90N65G2V Click to download

文件大小   402.03 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package

SCTW90N65G2V 数据表 (HTML) - STMicroelectronics


SCTW90N65G2V 产品详情

Features

• Very high operating junction temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitances

Applications

• Switching applications
• Power supply for renewable energy systems
• High frequency DC-DC converters

Description

This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.




类似零件编号 - SCTW90N65G2V

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类似说明 - SCTW90N65G2V

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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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