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DS1250BL-100-IND 数据表 (PDF) - Dallas Semiconductor

DS1250BL-100-IND Datasheet PDF - Dallas Semiconductor
部件名 DS1250BL-100-IND
下载  DS1250BL-100-IND 下载

文件大小   181.99 Kbytes
  9 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 4096K Nonvolatile SRAM

DS1250BL-100-IND Datasheet (PDF)

Go To PDF Page 下载 数据表
DS1250BL-100-IND Datasheet PDF - Dallas Semiconductor

部件名 DS1250BL-100-IND
下载  DS1250BL-100-IND Click to download

文件大小   181.99 Kbytes
  9 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 4096K Nonvolatile SRAM

DS1250BL-100-IND 数据表 (HTML) - Dallas Semiconductor

DS1250BL-100-IND Datasheet HTML 1Page - Dallas Semiconductor DS1250BL-100-IND Datasheet HTML 2Page - Dallas Semiconductor DS1250BL-100-IND Datasheet HTML 3Page - Dallas Semiconductor DS1250BL-100-IND Datasheet HTML 4Page - Dallas Semiconductor DS1250BL-100-IND Datasheet HTML 5Page - Dallas Semiconductor DS1250BL-100-IND Datasheet HTML 6Page - Dallas Semiconductor DS1250BL-100-IND Datasheet HTML 7Page - Dallas Semiconductor DS1250BL-100-IND Datasheet HTML 8Page - Dallas Semiconductor DS1250BL-100-IND Datasheet HTML 9Page - Dallas Semiconductor

DS1250BL-100-IND 产品详情

DESCRIPTION
The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES
• 10 years minimum data retention in the absence of external power
• Data is automatically protected during power loss
• Unlimited write cycles
• Low-power CMOS
• Read and write access times as fast as 70 ns
• Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
• Full ±10% VCC operating range (DS1250YL)
• Optional ±5% VCC operating range (DS1250BL)
• Optional industrial temperature range of –40°C to +85°C, designated IND
• JEDEC standard 32–pin DIP package
• Low Profile Module (LPM) package
    – Fits into standard 68–pin PLCC surface–mountable sockets
    – 250 mil package height




类似零件编号 - DS1250BL-100-IND

制造商部件名数据表功能描述
logo
Maxim Integrated Produc...
DS1250BL MAXIM-DS1250BL Datasheet
323Kb / 9P
   4096K Nonvolatile SRAM
022598
More results


类似说明 - DS1250BL-100-IND

制造商部件名数据表功能描述
logo
Dallas Semiconductor
DS1250Y DALLAS-DS1250Y Datasheet
217Kb / 11P
   4096k Nonvolatile SRAM
logo
Maxim Integrated Produc...
DS1250Y-70IND MAXIM-DS1250Y-70IND Datasheet
242Kb / 10P
   4096k Nonvolatile SRAM
Rev 12/10
DS1250YL MAXIM-DS1250YL Datasheet
323Kb / 9P
   4096K Nonvolatile SRAM
022598
DS1250AB MAXIM-DS1250AB Datasheet
242Kb / 10P
   4096k Nonvolatile SRAM
19-5647; Rev 12/10
logo
Dallas Semiconductor
DS1250W DALLAS-DS1250W Datasheet
217Kb / 11P
   3.3V 4096k Nonvolatile SRAM
logo
Maxim Integrated Produc...
DS1250W MAXIM-DS1250W Datasheet
226Kb / 9P
   3.3V 4096k Nonvolatile SRAM
19-5648; Rev 12/10
DS1350AB MAXIM-DS1350AB Datasheet
225Kb / 10P
   4096k Nonvolatile SRAM with Battery Monitor
19-5585; Rev 10/10
logo
Dallas Semiconductor
DS1350Y DALLAS-DS1350Y Datasheet
228Kb / 12P
   4096k Nonvolatile SRAM with Battery Monitor
logo
Maxim Integrated Produc...
DS1350YL MAXIM-DS1350YL Datasheet
387Kb / 9P
   4096K Nonvolatile SRAM with Battery Monitor
022598
DS1350W MAXIM-DS1350W Datasheet
217Kb / 10P
   3.3V 4096k Nonvolatile SRAM with Battery Monitor
19-5586; Rev 10/10
More results




关于 Dallas Semiconductor


达拉斯半导体是一家美国公司,成立于1984年,是混合信号和数字半导体的供应商。
该公司总部位于德克萨斯州达拉斯,并以其创新产品和技术在实时时钟,温度传感器和其他集成电路领域而闻名。
2002年,达拉斯半导体被跨国半导体公司Maxim Integrated收购,并成为Maxim的子公司。
达拉斯半导体品牌不再使用,但其产品和技术仍然是Maxim投资组合的一部分。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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