1 Features
• 65-V Three Phase Half-Bridge Gate Driver
– Drives 3 High-Side and 3 Low-Side N-Channel
MOSFETs (NMOS)
– 4.5 to 60-V Operating Voltage Range
– Supports 100% PWM Duty Cycle with Trickle
Charge pump
• Bootstrap based Gate Driver Architecture
– 1000-mA Maximum Peak Source Current
– 2000-mA Maximum Peak Sink Current
• Integrated Current Sense Amplifier with low input
offset (optimized for 1 shunt)
– Adjustable Gain (5, 10, 20, 40 V/V)
• Hardware interface provides simple configuration
• Ultra-low power sleep mode <1 uA at 25 ̊C
• 4-ns (typ) propagation delay matching between
phases
• Independent driver shutdown path (DRVOFF)
• 65-V tolerant wake pin (nSLEEP)
• Supports negative transients upto -10V on SHx
• 6x and 3x PWM Modes
• Supports 3.3-V, and 5-V Logic Inputs
• Accurate LDO (AVDD), 3.3 V ±3%, 80 mA
• Compact QFN Packages and Footprints
• Adjustable VDS overcurrent threshold through
VDSLVL pin
• Adjustable deadtime through DT pin
• Efficient System Design With Power Blocks
• Integrated Protection Features
– PVDD Undervoltage Lockout (PVDDUV)
– GVDD Undervoltage (GVDDUV)
– Bootstrap Undervoltage (BST_UV)
– Overcurrent Protection (VDS_OCP, SEN_OCP)
– Thermal Shutdown (OTSD)
– Fault Condition Indicator (nFAULT)

2 Applications
• Brushless-DC (BLDC) Motor Modules and PMSM
• Automotive Pumps
• Automotive HVAC fans
• E-Bikes, E-Scooters, and E-Mobility
• Automotive Body Electronics (Window, Door,
Sunroof, Seat, Wiper) Modules

3 Description
The DRV8329-Q1 family of devices is an integrated
gate driver for three-phase applications. The devices
provide three half-bridge gate drivers, each capable
of driving high-side and low-side N-channel power
MOSFETs. The device generates the correct gate
drive voltages using an internal charge pump and
enhances the high-side MOSFETs using a bootstrap
circuit. A trickle charge pump is included to support
100% duty cycle. The Gate Drive architecture
supports peak gate drive currents up to 1-A source
and 2-A sink. The DRV8329-Q1 can operate from a
single power supply and supports a wide input supply
range of 4.5 to 60 V.
The 6x and 3x PWM modes allow for simple
interfacing to controller circuits. The device has
integrated accurate 3.3-V LDO that can be used
to power external controller and can be used as
reference for CSA. The configuration settings for the
device are configurable through hardware (H/W) pins.
The DRV8329-Q1 devices integrate low-side current
sense amplifier that allow current sensing for sum of
current from all three phases of the drive stage.
A low-power sleep mode is provided to achieve
low quiescent current by shutting down most of
the internal circuitry. Internal protection functions
are provided for undervoltage lockout, GVDD fault,
MOSFET overcurrent, MOSFET short circuit, and
overtemperature. Fault conditions are indicated on
nFAULT pin.