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N64T1630C1B 数据表 (PDF) - NanoAmp Solutions, Inc.

N64T1630C1B Datasheet PDF - NanoAmp Solutions, Inc.
部件名 N64T1630C1B
下载  N64T1630C1B 下载

文件大小   348.47 Kbytes
  18 Pages
制造商  NANOAMP [NanoAmp Solutions, Inc.]
网页  http://www.nanoamp.com
标志 NANOAMP - NanoAmp Solutions, Inc.
功能描述 64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 횞 16 Bits

N64T1630C1B Datasheet (PDF)

Go To PDF Page 下载 数据表
N64T1630C1B Datasheet PDF - NanoAmp Solutions, Inc.

部件名 N64T1630C1B
下载  N64T1630C1B Click to download

文件大小   348.47 Kbytes
  18 Pages
制造商  NANOAMP [NanoAmp Solutions, Inc.]
网页  http://www.nanoamp.com
标志 NANOAMP - NanoAmp Solutions, Inc.
功能描述 64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 횞 16 Bits

N64T1630C1B 数据表 (HTML) - NanoAmp Solutions, Inc.

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N64T1630C1B 产品详情

Overview
The N64T1630C1B is an integrated memory
device containing a 64 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 4,194,304 words by 16 bits. It is
designed to be compatible in operation and
interface to standard 6T SRAMS. The device is
designed for low standby and operating current
and includes a power-down feature to
automatically enter standby mode.

Features
• Dual voltage rails for optimum power & performance
    Vcc - 2.7V - 3.3V
    Vccq - 2.7V to 3.3V
• Fast Cycle Times
    TACC < 70 nS (60ns future)
    TPACC < 25 nS
• Very low standby current
    ISB < 170µA
• Very low operating current
    Icc < 25mA
• PASR (Partial Array Self Refresh)
• TCR (Temperature Compensated Refresh)




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