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HB52RF1289E2U-75B 数据表 (PDF) - Elpida Memory

HB52RF1289E2U-75B Datasheet PDF - Elpida Memory
部件名 HB52RF1289E2U-75B
下载  HB52RF1289E2U-75B 下载

文件大小   157.69 Kbytes
  20 Pages
制造商  ELPIDA [Elpida Memory]
网页  http://www.elpida.com/en
标志 ELPIDA - Elpida Memory
功能描述 1 GB Registered SDRAM DIMM 128-Mword72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 횞 4 Components) PC133 SDRAM

HB52RF1289E2U-75B Datasheet (PDF)

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HB52RF1289E2U-75B Datasheet PDF - Elpida Memory

部件名 HB52RF1289E2U-75B
下载  HB52RF1289E2U-75B Click to download

文件大小   157.69 Kbytes
  20 Pages
制造商  ELPIDA [Elpida Memory]
网页  http://www.elpida.com/en
标志 ELPIDA - Elpida Memory
功能描述 1 GB Registered SDRAM DIMM 128-Mword72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 횞 4 Components) PC133 SDRAM

HB52RF1289E2U-75B 数据表 (HTML) - Elpida Memory

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HB52RF1289E2U-75B 产品详情

Description
The HB52RF1289E2U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB52RF1289E2U is a 64M × 72 × 2-bank Synchronous Dynamic RAM Module, mounted 36 pieces of 256-Mbit SDRAM (HM5225405BTB) sealed in TCP package, 1 piece of PLL clock driver, 3 pieces register driver and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52RF1289E2U is 168-pin socket type package (dual lead out). Therefore, the HB52RF1289E2U makes high density mounting possible without surface mount technology. The HB52RF1289E2U provides common data inputs and outputs. Decoupling capacitors are mounted beside TCP on the module board.

duct
Features
• Fully compatible with : JEDEC standard outline 8-byte DIMM
• 168-pin socket type package (dual lead out)
    - Outline: 133.35 mm (Length) × 30.48 mm (Height) × 4.80 mm (Thickness)
    - Lead pitch: 1.27 mm
• 3.3 V power supply
• Clock frequency: 133 MHz (max)
• LVTTL interface
• Data bus width: × 72ECC
• Single pulsed RAS
• 4 Banks can operates simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length: 1/2/4/8
• 2 variations of burst sequence
    - Sequential
    - Interleave
• Programmable CE latency : 4
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64 ms
• 2 variations of refresh
    - Auto refresh
    - Self refresh




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类似说明 - HB52RF1289E2U-75B

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