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K4E660812B 数据表 (PDF) - Samsung semiconductor

K4E660812B Datasheet PDF - Samsung semiconductor
部件名 K4E660812B
下载  K4E660812B 下载

文件大小   416.71 Kbytes
  21 Pages
制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor
功能描述 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812B Datasheet (PDF)

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K4E660812B Datasheet PDF - Samsung semiconductor

部件名 K4E660812B
下载  K4E660812B Click to download

文件大小   416.71 Kbytes
  21 Pages
制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor
功能描述 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812B 数据表 (HTML) - Samsung semiconductor

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K4E660812B 产品详情

DESCRIPTION
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family.

FEATURES
• Part Identification
    - K4E660812B-JC/L(3.3V, 8K Ref., SOJ)
    - K4E640812B-JC/L(3.3V, 4K Ref., SOJ)
    - K4E660812B-TC/L(3.3V, 8K Ref., TSOP)
    - K4E640812B-TC/L(3.3V, 4K Ref., TSOP)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
• Extended Data Out Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V±0.3V power supply




类似零件编号 - K4E660812B

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类似说明 - K4E660812B

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