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ST2304SRG 数据表 (PDF) - Stanson Technology

ST2304SRG Datasheet PDF - Stanson Technology
部件名 ST2304SRG
下载  ST2304SRG 下载

文件大小   630.83 Kbytes
  6 Pages
制造商  STANSON [Stanson Technology]
网页  http://www.stansontech.com
标志 STANSON - Stanson Technology
功能描述 ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST2304SRG Datasheet (PDF)

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ST2304SRG Datasheet PDF - Stanson Technology

部件名 ST2304SRG
下载  ST2304SRG Click to download

文件大小   630.83 Kbytes
  6 Pages
制造商  STANSON [Stanson Technology]
网页  http://www.stansontech.com
标志 STANSON - Stanson Technology
功能描述 ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST2304SRG 数据表 (HTML) - Stanson Technology

ST2304SRG Datasheet HTML 1Page - Stanson Technology ST2304SRG Datasheet HTML 2Page - Stanson Technology ST2304SRG Datasheet HTML 3Page - Stanson Technology ST2304SRG Datasheet HTML 4Page - Stanson Technology ST2304SRG Datasheet HTML 5Page - Stanson Technology ST2304SRG Datasheet HTML 6Page - Stanson Technology

ST2304SRG 产品详情

DESCRIPTION
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE
● 30V/3.2A, RDS(ON) = 44m-ohm (Typ.) @VGS = 10.0V
● 30V/2.0A, RDS(ON) = 60m-ohm @VGS = 4.5V
● 30V/1.5A, RDS(ON) =90 m-ohm @VGS = 2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23 package design




类似零件编号 - ST2304SRG

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VBsemi Electronics Co.,...
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