制造商 | 部件名 | 数据表 | 功能描述 |
Diodes Incorporated |
DMG4406LSS
|
232Kb / 6P |
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|
DMG7430LFG
|
223Kb / 7P |
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|
Texas Instruments |
CSD16408Q5C
|
340Kb / 11P |
[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
CSD18503Q5A
|
730Kb / 12P |
[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
CSD18531Q5A
|
1Mb / 12P |
[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
CSD16408Q5
|
323Kb / 11P |
[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
CSD18504Q5A
|
745Kb / 12P |
[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
CSD16407Q5C
|
345Kb / 11P |
[Old version datasheet] ID The NexFET??power MOSFET has been designed to minimize losses in power conversion applications.
|
CSD17302Q5A
|
521Kb / 11P |
[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
|
CSD17304Q3
|
532Kb / 11P |
[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
|