1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/ sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM fea tures such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. Key Features • JEDEC standard VDD = 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5, 6 • Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5 • Write Latency(WL) = Read Latency(RL) -1 • Burst Length: 4 , 8(Interleave/nibble sequential) • Programmable Sequential / Interleave Burst Mode • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) • Off-Chip Driver(OCD) Impedance Adjustment • On Die Termination • Special Function Support - 50ohm ODT - High Temperature Self-Refresh rate enable • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C • All of products are Lead-Free, Halogen-Free, and RoHS compliant
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