HGTG12N60C3D 数据表(PDF) - Harris Corporation

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HGTG12N60C3D 数据表 (PDF) - Harris Corporation

HGTG12N60C3D Datasheet PDF - Harris Corporation


部件名	HGTG12N60C3D

下载	HGTG12N60C3D 下载

文件大小	102.49 Kbytes

页	7 Pages

制造商	HARRIS [Harris Corporation]

网页	http://www.harris.com

标志

功能描述	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG12N60C3D Datasheet (PDF)

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HGTG12N60C3D Datasheet PDF - Harris Corporation


部件名	HGTG12N60C3D

下载	HGTG12N60C3D Click to download

文件大小	102.49 Kbytes

页	7 Pages

制造商	HARRIS [Harris Corporation]

网页	http://www.harris.com

标志

功能描述	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG12N60C3D 数据表 (HTML) - Harris Corporation

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HGTG12N60C3D Datasheet HTML 7Page - Harris Corporation

HGTG12N60C3D 产品详情

Description
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in antiparallel with the IGBT is the development type TA49061.

Features
• 24A, 600V at TC = 25°C
• Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

类似零件编号 - HGTG12N60C3D

制造商	部件名	数据表	功能描述
Intersil Corporation	HGTG12N60C3D	98Kb / 7P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Fairchild Semiconductor	HGTG12N60C3D	124Kb / 8P	24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
ON Semiconductor	HGTG12N60C3D	270Kb / 9P	UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V September, 2021 - Rev. 3

类似说明 - HGTG12N60C3D

制造商	部件名	数据表	功能描述
Intersil Corporation	HGTG12N60C3D	98Kb / 7P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Fairchild Semiconductor	HGTG12N60C3D	124Kb / 8P	24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
Intersil Corporation	HGTP12N60C3D	99Kb / 7P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 2000
Fairchild Semiconductor	HGTP12N60C3D	154Kb / 8P	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Intersil Corporation	HGTG30N60B3D	109Kb / 7P	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Harris Corporation	HGTP3N60C3D	394Kb / 11P	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil Corporation	HGTG20N60B3D	135Kb / 6P	40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Fairchild Semiconductor	HGTG20N60C3D	123Kb / 8P	45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil Corporation	HGTG20N60C3D	82Kb / 7P	45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
Intersil Corporation	HGTP3N60B3D	154Kb / 7P	7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000

关于 Harris Corporation

Harris Corporation was a Florida-based technology company that specialized in communications and information technology. The company was founded in 1895 and went through several iterations over the years, including mergers and acquisitions.

In 2019, Harris Corporation merged with L3 Technologies to form L3Harris Technologies, which is now one of the largest defense companies in the world. The company provides a wide range of products and services in the areas of aerospace, defense, communications, and intelligence.

Some of Harris Corporation's previous areas of focus included tactical radios, satellite communications systems, air traffic control systems, and cybersecurity solutions. The company's customers included the U.S. military, government agencies, and commercial organizations around the world.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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