DESCRIPTION
TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES
•  High-speed access times: 8, 10, 20 ns
•  High-performance, low-power CMOS process
•  Multiple center power and ground pins for greater noise immunity
•  Easy memory expansion with CE and OE options
•  CE power-down
•  Fully static operation: no clock or refresh required
•  TTL compatible inputs and outputs
•  Single power supply
    Vdd 1.65V to 2.2V (IS61WV102416ALL)
    speed = 20ns for Vdd 1.65V to 2.2V
    Vdd 2.4V to 3.6V (IS61/64WV102416BLL)
    speed = 10ns for Vdd 2.4V to 3.6V
    speed = 8ns for Vdd 3.3V + 5%
•  Packages available:
    – 48-ball miniBGA (9mm x 11mm)
  – 48-pin TSOP (Type I)
•  Industrial and Automotive Temperature Support
•  Lead-free available
•  Data control for upper and lower bytes