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DS1220AD 数据表 (PDF) - Dallas Semiconductor

DS1220AD Datasheet PDF - Dallas Semiconductor
部件名 DS1220AD
下载  DS1220AD 下载

文件大小   136.85 Kbytes
  9 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 16k Nonvolatile SRAM

DS1220AD Datasheet (PDF)

Go To PDF Page 下载 数据表
DS1220AD Datasheet PDF - Dallas Semiconductor

部件名 DS1220AD
下载  DS1220AD Click to download

文件大小   136.85 Kbytes
  9 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 16k Nonvolatile SRAM

DS1220AD 数据表 (HTML) - Dallas Semiconductor

DS1220AD Datasheet HTML 1Page - Dallas Semiconductor DS1220AD Datasheet HTML 2Page - Dallas Semiconductor DS1220AD Datasheet HTML 3Page - Dallas Semiconductor DS1220AD Datasheet HTML 4Page - Dallas Semiconductor DS1220AD Datasheet HTML 5Page - Dallas Semiconductor DS1220AD Datasheet HTML 6Page - Dallas Semiconductor DS1220AD Datasheet HTML 7Page - Dallas Semiconductor DS1220AD Datasheet HTML 8Page - Dallas Semiconductor DS1220AD Datasheet HTML 9Page - Dallas Semiconductor

DS1220AD 产品详情

DESCRIPTION
The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES
◾ 10 years minimum data retention in the absence of external power
◾ Data is automatically protected during power loss
◾ Directly replaces 2k x 8 volatile static RAM or EEPROM
◾ Unlimited write cycles
◾ Low-power CMOS
◾ JEDEC standard 24-pin DIP package
◾ Read and write access times as fast as 100 ns
◾ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
◾ Full ±10% VCC operating range (DS1220AD)
◾ Optional ±5% VCC operating range (DS1220AB)
◾ Optional industrial temperature range of -40°C to +85°C, designated IND




类似零件编号 - DS1220AD

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类似说明 - DS1220AD

制造商部件名数据表功能描述
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Dallas Semiconductor
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BQ4016 TI-BQ4016 Datasheet
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关于 Dallas Semiconductor


达拉斯半导体是一家美国公司,成立于1984年,是混合信号和数字半导体的供应商。
该公司总部位于德克萨斯州达拉斯,并以其创新产品和技术在实时时钟,温度传感器和其他集成电路领域而闻名。
2002年,达拉斯半导体被跨国半导体公司Maxim Integrated收购,并成为Maxim的子公司。
达拉斯半导体品牌不再使用,但其产品和技术仍然是Maxim投资组合的一部分。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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