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DS1230Y-100 数据表 (PDF) - Dallas Semiconductor

DS1230Y-100 Datasheet PDF - Dallas Semiconductor
部件名 DS1230Y-100
下载  DS1230Y-100 下载

文件大小   213.86 Kbytes
  12 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 256k Nonvolatile SRAM

DS1230Y-100 Datasheet (PDF)

Go To PDF Page 下载 数据表
DS1230Y-100 Datasheet PDF - Dallas Semiconductor

部件名 DS1230Y-100
下载  DS1230Y-100 Click to download

文件大小   213.86 Kbytes
  12 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 256k Nonvolatile SRAM

DS1230Y-100 数据表 (HTML) - Dallas Semiconductor

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DS1230Y-100 产品详情

DESCRIPTION

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.



FEATURES

■ 10 years minimum data retention in the absence of external power

■ Data is automatically protected during power loss

■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory

■ Unlimited write cycles

■ Low-power CMOS

■ Read and write access times as fast as 70 ns

■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time

■ Full ±10% VCC operating range (DS1230Y)

■ Optional ±5% VCC operating range (DS1230AB)

■ Optional industrial temperature range of -40°C to +85°C, designated IND

■ JEDEC standard 28-pin DIP package

■ New PowerCap Module (PCM) package

   - Directly surface-mountable module

   - Replaceable snap-on PowerCap provides lithium backup battery

   - Standardized pinout for all nonvolatile SRAM products

   - Detachment feature on PowerCap allows easy removal using a regular screwdriver



 




类似零件编号 - DS1230Y-100

制造商部件名数据表功能描述
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Maxim Integrated Produc...
DS1230Y-120 MAXIM-DS1230Y-120 Datasheet
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类似说明 - DS1230Y-100

制造商部件名数据表功能描述
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Maxim Integrated Produc...
DS1230AB MAXIM-DS1230AB Datasheet
222Kb / 10P
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DS1230Y-120 MAXIM-DS1230Y-120 Datasheet
222Kb / 10P
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Dallas Semiconductor
DS1230Y DALLAS-DS1230Y_10 Datasheet
222Kb / 10P
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DS1230W DALLAS-DS1230W Datasheet
214Kb / 11P
   3.3V 256k Nonvolatile SRAM
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ARTSCHIP ELECTRONICS CO...
DS1230W ARTSCHIP-DS1230W Datasheet
527Kb / 11P
   3.3V 256K Nonvolatile SRAM
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Maxim Integrated Produc...
DS1230W MAXIM-DS1230W Datasheet
202Kb / 10P
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19-5636; Rev 11/10
DS2030W MAXIM-DS2030W Datasheet
610Kb / 12P
   3.3V Single-Piece 256k Nonvolatile SRAM
Rev 0; 10/04
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Dallas Semiconductor
DS1330AB DALLAS-DS1330AB Datasheet
191Kb / 11P
   256k Nonvolatile SRAM with Battery Monitor
DS1330Y DALLAS-DS1330Y_10 Datasheet
217Kb / 10P
   256k Nonvolatile SRAM with Battery Monitor
logo
Maxim Integrated Produc...
DS1330AB MAXIM-DS1330AB Datasheet
217Kb / 10P
   256k Nonvolatile SRAM with Battery Monitor
19-5593; Rev 10/10
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关于 Dallas Semiconductor


达拉斯半导体是一家美国公司,成立于1984年,是混合信号和数字半导体的供应商。
该公司总部位于德克萨斯州达拉斯,并以其创新产品和技术在实时时钟,温度传感器和其他集成电路领域而闻名。
2002年,达拉斯半导体被跨国半导体公司Maxim Integrated收购,并成为Maxim的子公司。
达拉斯半导体品牌不再使用,但其产品和技术仍然是Maxim投资组合的一部分。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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