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DS1250ABP-70-IND 数据表 (PDF) - Dallas Semiconductor

DS1250ABP-70-IND Datasheet PDF - Dallas Semiconductor
部件名 DS1250ABP-70-IND
下载  DS1250ABP-70-IND 下载

文件大小   217.62 Kbytes
  11 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 4096k Nonvolatile SRAM

DS1250ABP-70-IND Datasheet (PDF)

Go To PDF Page 下载 数据表
DS1250ABP-70-IND Datasheet PDF - Dallas Semiconductor

部件名 DS1250ABP-70-IND
下载  DS1250ABP-70-IND Click to download

文件大小   217.62 Kbytes
  11 Pages
制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor
功能描述 4096k Nonvolatile SRAM

DS1250ABP-70-IND 数据表 (HTML) - Dallas Semiconductor

Back Button DS1250ABP-70-IND Datasheet HTML 1Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 2Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 3Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 4Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 5Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 6Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 7Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 8Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 9Page - Dallas Semiconductor DS1250ABP-70-IND Datasheet HTML 10Page - Dallas Semiconductor Next Button 

DS1250ABP-70-IND 产品详情

DESCRIPTION
The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250 devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular byte-wide 32-pin DIP standard. DS1250 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES
■ 10 years minimum data retention in the
absence of external power
■ Data is automatically protected during power loss
■ Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times of 70ns
■ Lithium energy source is electrically
   disconnected to retain freshness until power is
   applied for the first time
■ Full ±10% VCC operating range (DS1250Y)
■ Optional ±5% VCC operating range (DS1250AB)
■ Optional industrial temperature range of
   -40°C to +85°C, designated IND
■ JEDEC standard 32-pin DIP package
■ PowerCap Module (PCM) package
   - Directly surface-mountable module
   - Replaceable snap-on PowerCap provides lithium backup battery
   - Standardized pinout for all nonvolatile SRAM products
   - Detachment feature on PCM allows easy removal using a regular screwdriver




类似零件编号 - DS1250ABP-70-IND

制造商部件名数据表功能描述
logo
Maxim Integrated Produc...
DS1250ABP-70++ MAXIM-DS1250ABP-70+ Datasheet
242Kb / 10P
   4096k Nonvolatile SRAM
19-5647; Rev 12/10
DS1250ABP-70IND++ MAXIM-DS1250ABP-70IND+ Datasheet
242Kb / 10P
   4096k Nonvolatile SRAM
19-5647; Rev 12/10
More results


类似说明 - DS1250ABP-70-IND

制造商部件名数据表功能描述
logo
Maxim Integrated Produc...
DS1250Y-70IND MAXIM-DS1250Y-70IND Datasheet
242Kb / 10P
   4096k Nonvolatile SRAM
Rev 12/10
DS1250YL MAXIM-DS1250YL Datasheet
323Kb / 9P
   4096K Nonvolatile SRAM
022598
DS1250AB MAXIM-DS1250AB Datasheet
242Kb / 10P
   4096k Nonvolatile SRAM
19-5647; Rev 12/10
logo
Dallas Semiconductor
DS1250BL DALLAS-DS1250BL Datasheet
181Kb / 9P
   4096K Nonvolatile SRAM
DS1250W DALLAS-DS1250W Datasheet
217Kb / 11P
   3.3V 4096k Nonvolatile SRAM
logo
Maxim Integrated Produc...
DS1250W MAXIM-DS1250W Datasheet
226Kb / 9P
   3.3V 4096k Nonvolatile SRAM
19-5648; Rev 12/10
DS1350AB MAXIM-DS1350AB Datasheet
225Kb / 10P
   4096k Nonvolatile SRAM with Battery Monitor
19-5585; Rev 10/10
logo
Dallas Semiconductor
DS1350Y DALLAS-DS1350Y Datasheet
228Kb / 12P
   4096k Nonvolatile SRAM with Battery Monitor
logo
Maxim Integrated Produc...
DS1350YL MAXIM-DS1350YL Datasheet
387Kb / 9P
   4096K Nonvolatile SRAM with Battery Monitor
022598
DS1350W MAXIM-DS1350W Datasheet
217Kb / 10P
   3.3V 4096k Nonvolatile SRAM with Battery Monitor
19-5586; Rev 10/10
More results




关于 Dallas Semiconductor


达拉斯半导体是一家美国公司,成立于1984年,是混合信号和数字半导体的供应商。
该公司总部位于德克萨斯州达拉斯,并以其创新产品和技术在实时时钟,温度传感器和其他集成电路领域而闻名。
2002年,达拉斯半导体被跨国半导体公司Maxim Integrated收购,并成为Maxim的子公司。
达拉斯半导体品牌不再使用,但其产品和技术仍然是Maxim投资组合的一部分。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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