数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

HN29W25611 数据表 (PDF) - Hitachi Semiconductor

HN29W25611 Datasheet PDF - Hitachi Semiconductor
部件名 HN29W25611
下载  HN29W25611 下载

文件大小   347.65 Kbytes
  43 Pages
制造商  HITACHI [Hitachi Semiconductor]
网页  http://www.renesas.com/eng
标志 HITACHI - Hitachi Semiconductor
功能描述 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611 Datasheet (PDF)

Go To PDF Page 下载 数据表
HN29W25611 Datasheet PDF - Hitachi Semiconductor

部件名 HN29W25611
下载  HN29W25611 Click to download

文件大小   347.65 Kbytes
  43 Pages
制造商  HITACHI [Hitachi Semiconductor]
网页  http://www.renesas.com/eng
标志 HITACHI - Hitachi Semiconductor
功能描述 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611 数据表 (HTML) - Hitachi Semiconductor

Back Button HN29W25611 Datasheet HTML 1Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 2Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 3Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 4Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 5Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 6Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 7Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 8Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 9Page - Hitachi Semiconductor HN29W25611 Datasheet HTML 10Page - Hitachi Semiconductor Next Button 

HN29W25611 产品详情

Description
The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611 are more than 16,057 (98% of all sector address) and less than 16,384 sectors.

Features
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Organization
    - AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
    - Data register: (2048 + 64) bytes
• Multi-level memory cell
    - 2 bit/per memory cell
• Automatic programming
    - Sector program time: 3.0 ms (typ)
    - System bus free
    - Address, data latch function
    - Internal automatic program verify function
    - Status data polling function
• Automatic erase
    - Single sector erase time: 1.5 ms (typ)
    - System bus free
    - Internal automatic erase verify function
    - Status data polling function
• Erase mode
    - Single sector erase ((2048 + 64) byte unit)
• Fast serial read access time:
    - First access time: 50 µs (max)
    - Serial access time: 50 ns (max)
• Low power dissipation:
    - ICC2 = 50 mA (max) (Read)
    - ISB2 = 50 µA (max) (Standby)
    - ICC3/ICC4 = 40 mA (max) (Erase/Program)
    - ISB3 = 5 µA (max) (Deep standby)
• The following architecture is required for data reliability.
    - Error correction: more than 3-bit error correction per each sector read
    - Spare sectors: 1.8% (290 sectors) within usable sectors




类似零件编号 - HN29W25611

制造商部件名数据表功能描述
logo
Hitachi Semiconductor
HN29W25611T HITACHI-HN29W25611T Datasheet
331Kb / 42P
   256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
HN29W25611T-50H HITACHI-HN29W25611T-50H Datasheet
331Kb / 42P
   256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
More results


类似说明 - HN29W25611

制造商部件名数据表功能描述
logo
Renesas Technology Corp
HN29V25611AT-50H RENESAS-HN29V25611AT-50H Datasheet
349Kb / 47P
   256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
logo
Hitachi Semiconductor
HN29W25611T HITACHI-HN29W25611T Datasheet
331Kb / 42P
   256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
logo
Renesas Technology Corp
HN29V25611AT-50 RENESAS-HN29V25611AT-50 Datasheet
351Kb / 47P
   256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
logo
Mitsubishi Electric Sem...
M5M29F25611VP MITSUBISHI-M5M29F25611VP Datasheet
499Kb / 36P
   MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
logo
Hitachi Semiconductor
HN29W12811 HITACHI-HN29W12811 Datasheet
315Kb / 42P
   128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
HN29V51211 HITACHI-HN29V51211 Datasheet
306Kb / 42P
   512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
logo
Renesas Technology Corp
HN29V102414 RENESAS-HN29V102414 Datasheet
352Kb / 48P
   1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2
logo
List of Unclassifed Man...
MX29LV033C ETC1-MX29LV033C Datasheet
530Kb / 57P
   32M-BIT COMSEQUAL SECTOR FLASH MEMORY
logo
Samsung semiconductor
K9K2G08U0A SAMSUNG-K9K2G08U0A Datasheet
850Kb / 34P
   256M x 8 Bit NAND Flash Memory
K9F2G08B0B SAMSUNG-K9F2G08B0B Datasheet
826Kb / 41P
   256M x 8 Bit NAND Flash Memory
More results




关于 Hitachi Semiconductor


日立半导体是Hitachi,Ltd。的子公司,Hitachi,Ltd。是一家专门从事半导体设计和制造的日本公司。
该公司成立于1970年,总部位于日本东京。
Hitachi半导体提供了广泛的产品,包括存储器产品,微控制器,电源管理IC以及其他模拟和数字半导体。
该公司的产品用于各种应用,例如消费电子,汽车系统和工业设备。
日立半导体以其半导体技术方面的专业知识以及向客户提供高质量和可靠产品的能力而闻名。
该公司在世界各地都有运营和设施,并与客户紧密合作,提供符合其特定要求和需求的定制半导体解决方案。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




链接网址



隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com