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STM32MP157C 数据表(PDF) 210 Page - STMicroelectronics |
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STM32MP157C 数据表(HTML) 210 Page - STMicroelectronics |
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210 / 258 page ![]() Electrical characteristics STM32MP157C 210/258 DS12505 Rev 2 6.3.28 Temperature and VBAT monitoring characteristics for tamper detection 6.3.29 VDDCORE monitoring characteristics 6.3.30 Voltage booster for analog switch Table 87. VBAT charging characteristics Symbol Parameter Condition Min Typ Max Unit RBC Battery charging resistor VBRS in PWR_CR3= 0 - 5 - kΩ VBRS in PWR_CR3= 1 - 1.5 - Table 88. Temperature and VBAT monitoring characteristics for temper detection Symbol Parameter Min Typ Max Unit TEMPhigh High temperature monitoring 105 116 126 oC TEMPlow Low temperature monitoring -42 -31 -20 VBAThigh(1) 1. Monitored supply is VSW (i.e. VDD if VDD is present, VBAT otherwise) High supply monitoring 3.47 3.59 3.73 V VBATlow(1) Low supply monitoring 1.3 1.34 1.43 Table 89. VDDCORE monitoring characteristics Symbol Parameter Min Typ Max Unit tS_vddcore(1) 1. Guaranteed by design. ADC sampling time when reading VDDCORE input 100 - - ns Table 90. Voltage booster for analog switch characteristics Symbol Parameter Condition Min Typ Max Unit VDD Supply voltage - 1.71 - 3.6 V tSU(BOOST) Booster startup time - - - 50 µs IDD(BOOST) Booster consumption 1.71 V ≤ VDD ≤ 2.7 V - - 125 µA 2.7 V < VDD < 3.6 V - - 250 |
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