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QN3120M6N 数据表(PDF) 3 Page - uPI Group Inc.

部件名 QN3120M6N
功能描述  N-Channel 30V Fast Switching MOSFET
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制造商  UPI [uPI Group Inc.]
网页  http://www.ubiq-semi.com/
标志 UPI - uPI Group Inc.

QN3120M6N 数据表(HTML) 3 Page - uPI Group Inc.

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QN3120M6N
QN3120M6N-DS-F0000, Dec. 2019
Copyright© uPI Semiconductor Corp. All Rights reserved.
www.upi-semi.com
2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25°C
Continuous Drain Current, VGS @ 10V1
118
A
ID@TC=100°C
Continuous Drain Current, VGS @ 10V1
75
A
ID@TA=25°C
Continuous Drain Current, VGS @ 10V1
21
A
ID@TA=70°C
Continuous Drain Current, VGS @ 10V1
17
A
IDM
Pulsed Drain Current2
236
A
EAS
Single Pulse Avalanche Energy3
136.2
mJ
IAS
Avalanche Current
52.2
A
PD@TC=25°C
Total Power Dissipation4
62
W
PD@TA=25°C
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient1
46
60
°C/W
RθJC
Thermal Resistance Junction-Case1
2
2.6
°C/W
 


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